abstract

• The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown GaxIn1-zAs QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the GaxIn-x As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE. © 2009 IOP Publishing Ltd.

authors

• De Anda Salazar Francisco Javier
• Elyukhin V.A.
• Gorbatchev Andrei
• Mishurnyi V.A.
• Ortiz Vázquez F.E.

publication date

• 2009-01-01

published in

• Journal of Physics: Conference Series  Journal

Digital Object Identifier (DOI)

• 10.1088/1742-6596/167/1/012002

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volume

• 167