Growth of quantum-well heterostructures by liquid phase epitaxy Article

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Overview

abstract

• This work reviews the different techniques proposed and used to grow ultra-thin layers by Liquid Phase Epitaxy. Some of these approaches have allowed the production of quantum-well heterostructures for optoelectronic devices with performances comparable to devices made by Molecular Beam Epitaxy or Metal Organic Chemical Vapor Deposition. Copyright © Taylor and Francis Group, LLC.

authors

• De Anda Salazar Francisco Javier
• Elyukhin V.A.
• Hernandez I.C.
• Mishurnyi V.A.

publication date

• 2006-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT  Grant
• Universidad Autónoma de San Luis Potosí, UASLP  Grant

published in

• Critical Reviews in Solid State and Materials Sciences  Journal

Research

keywords

• III-V semiconductors; Liquid Phase Epitaxy; Low-dimensional quantum devices; Semiconductor lasers Liquid phase epitaxy; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Optoelectronic devices; Semiconductor quantum wells; III-V semiconductors; Low dimensional quantum devices; Heterojunctions

Identity

Digital Object Identifier (DOI)

• 10.1080/10408430500538695

Additional Document Info

start page

• 1

end page

• 13

volume

• 31

issue

• 1-2