A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers Article uri icon

abstract

  • We have investigated and developed a method for the LPE growth of layers with approximately parabolic cross section. The channels were created during the growth process by modulating the liquid phase thickness with W or Mo wires parallel to the substrate. The main parameters of the channel can be controlled by changing the wire%27s diameter and its distance from the substrate. This method can be incorporated directly into the growth process of a laser structure with an unstable resonator without the need of additional treatments as chemical etching, to produce the channel structure.
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publication date

  • 1998-01-01