A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers
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We have investigated and developed a method for the LPE growth of layers with approximately parabolic cross section. The channels were created during the growth process by modulating the liquid phase thickness with W or Mo wires parallel to the substrate. The main parameters of the channel can be controlled by changing the wire%27s diameter and its distance from the substrate. This method can be incorporated directly into the growth process of a laser structure with an unstable resonator without the need of additional treatments as chemical etching, to produce the channel structure.
We have investigated and developed a method for the LPE growth of layers with approximately parabolic cross section. The channels were created during the growth process by modulating the liquid phase thickness with W or Mo wires parallel to the substrate. The main parameters of the channel can be controlled by changing the wire's diameter and its distance from the substrate. This method can be incorporated directly into the growth process of a laser structure with an unstable resonator without the need of additional treatments as chemical etching, to produce the channel structure.
