Growth of low-etch-pit density InSb single crystals by the Czochralski method Article uri icon

abstract

  • InSb single crystals with an etch pit density of 3.8 × 102 cm-2 have been grown by the conventional Czochralski method. This low value has been obtained without impurity hardening by growing the crystals parallel to the (3 1 1) direction by imposing an axial temperature gradient and using the necking technique. Hall effect measurements show that the crystals have a carrier concentration of 2.8 × 1016 cm-3 and a mobility of 62835 cm2/V s at room temperature.

publication date

  • 1997-01-01