Study of Te diffused into GaSb by photoluminescence and HRXRD

Photoluminescence (PL) and High Resolution X-Ray Diffraction (HRXRD) measurements were used to study the diffusion of Te on GaSb-p thin films deposited on GaSb-n substrates by Liquid Phase Epitaxy (LPE). The studied samples consist of an n-type layer on a p-type layer to carry out the diffusion. The diffusion process was done through thermic treatment at 450 °C and 2, 4 and 6 hours in to the hydrogen atmosphere. After carrying out the heat treatment, the n-type layer was removed with the purpose of studying the diffusion behavior of Te. The PL spectra show that when the time of diffusion increases, the signal produced by the exitonic transitions increases its intesity, this can be attributed to the increase of the concentration of Te in the GaSb-p film. The X-ray spectra show that in agreement it increases the time of diffusion, the amount of Te increases until having a single peak to 6 hrs of diffusion. © 2007 WILEY-VCH Verlag GmbH %26 Co. KGaA.

Compound semiconductor; Diffusion behavior; Diffusion processes; Expert evaluation; Heat-treatment; High-resolution x-ray diffraction; Hydrogen atmosphere; Liquid phase epitaxy (LPE); Photoluminescence (PL); PL spectrum; Single peak; Thin films; X-ray spectrum; Arsenic compounds; Chlorine compounds; Concentration (process); Crystal growth; Diffusion; Electric conductivity; Gallium alloys; Hydrogen; Light emission; Liquid phase epitaxy; Luminescence; Markov processes; Molecular beam epitaxy; Nonmetals; Photoluminescence; Semiconductor doping; Technology; Thick films; X ray analysis; X ray diffraction analysis; Semiconductor materials

VIVO