Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn) Article

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Overview

abstract

• Phase diagram of Ge:(C, Sn) describing the self-assembling conditions of 4C10Sn nanoclusters is represented. The smaller lattice strains caused by the isoelectronic impurity nanoclusters in comparison with the strains produced by isolated impurities are a reason of self-assembling. Occurrence of nanoclusters should be a result of continuous phase transition. At the carbon and Sn contents equal to 0.01 and 0.025, respectively, the fractions of Sn atoms situated in nanoclusters are 0.85 and 0.32 at 500 and 800 °C, respectively. At the bulk crystallization temperature of Ge self-assembling is insignificant. © 2009 Elsevier B.V. All rights reserved.

authors

• De Anda Salazar Francisco Javier
• Elyukhin V.A.
• Mishurnyi V.A.
• Rodriguez Peralta P.

publication date

• 2009-01-01

published in

• Physica B: Condensed Matter  Journal

Research

keywords

• Impurities; Nanoclusters; Self-assembling Bulk crystallization; Continuous phase transitions; Isoelectronic impurities; Lattice strain; Self-assembling; Germanium; Impurities; Phase diagrams; Phase transitions; Tin; Nanoclusters

Identity

Digital Object Identifier (DOI)

• 10.1016/j.physb.2009.08.106

Additional Document Info

start page

• 4543

end page

• 4545

volume

• 404

issue

• 23-24