abstract

• In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

authors

• De Anda Salazar Francisco Javier
• Gorbatchev Andrei
• Mishurnyi V.A.
• Ortiz F.E.
• Prutskij T.

publication date

• 2011-01-01

published in

• Journal of Physics: Conference Series  Journal

keywords

• Gallium arsenide; Nanocrystals; Photoluminescence spectroscopy; Semiconducting gallium; Semiconductor quantum dots; Substrates; Constant temperature; GaAs substrates; Growth driving forces; Liquidus temperature; Photoluminescence spectrum; Saturated liquid; Temperatures interval; Transient process; Liquids

Digital Object Identifier (DOI)

• 10.1088/1742-6596/274/1/012115

start page

end page

volume

• 274

issue

• 1