abstract

• ZnTe and Ga-doped ZnTe thin films were prepared onto glass and Te-doped GaSb substrates by thermal evaporation method under vacuum and their structural and optical properties were studied. XRD results show that for both substrates, the doping with gadolinium yield a reduction in the ZnTe lattice parameter. The optical band gap increases with incorporation of Gd into the ZnTe structure and the values obtained are 2.19 and 2.29 eV, respectively for glass and GaSb:Te substrates. The presence of defects due to Gd doping into ZnTe thin films is evidenced. © 2020

authors

• Ariza-Calderón H.
• De Anda Salazar Francisco Javier
• López J.D.
• Mosquera E.
• Riascos H.
• Tirado-Mejía L.

publication date

• 2020-01-01

keywords

• Te-doped GaSb substrate; Thermal evaporation; Thin films; ZnTe Antimony compounds; Energy gap; Gadolinium; Gallium compounds; Glass; II-VI semiconductors; III-V semiconductors; Optical properties; Semiconductor doping; Substrates; Thermal evaporation; Thin films; Vacuum evaporation; Zinc compounds; Ga-doped; Structural and optical properties; Thermal evaporation method; ZnTe; ZnTe thin films; Tellurium compounds

Digital Object Identifier (DOI)

• 10.1016/j.matlet.2020.127562

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volume

• 268