abstract

• In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 μs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 μm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10-5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50%25 cut-off wavelength around 5 μm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes. © 2020 by the authors.

authors

• Alchaar R.
• Bernhardt S.
• Bouschet M.
• Christol P.
• De Anda Salazar Francisco Javier
• Perez J.P.
• Ribet-Mohamed I.
• Zavala-Moran U.

publication date

• 2020-01-01

published in

• Photonics  Journal

keywords

• Barrier structure; Ga-free type-II superlattice; Midwave infrared quantum detector

Digital Object Identifier (DOI)

• 10.3390/PHOTONICS7030076

start page

end page

volume

• 7

issue

• 3