CdTe, ZnTe and Cd1-XZnXTe Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates

In this work are presented the results obtained from ZnTe, CdTe and Cd1-xZnxTe growth on GaSb and GaAs (001) oriented substrates by the regimen of Atomic Layer Deposition (ALD). The growths were performed by exposing the substrates alternatively to the elemental vapor sources for the case of ZnTe and CdTe and to the vapors of a solid solution in the case of Cd1-xZnxTe. Ellipsometric measurements showed that the value of the thickness per cycle was around 0.3 nm. That correspond to the value corresponding to a monolayer of ZnTe. As a result of High-resolution X-ray diffraction measurements it can be identified the mechanism of interface dislocation generation in the growth interface as the relaxation of the layers, additional the value of the full width at half maximum (FWHM) result about 300 to 600 arcsec, indicating a large density of dislocation. © 2017 Materials Research Society.

Atomic layer deposition; Dislocations; Nanostructure Atoms; Cadmium telluride; Dislocations (crystals); Gallium arsenide; II-VI semiconductors; III-V semiconductors; Nanostructures; Semiconducting gallium; Semiconductor alloys; X ray diffraction analysis; Cd1-xZnxTe; Density of dislocation; Ellipsometric measurements; Growth interfaces; High resolution X ray diffraction; Interface dislocation; Nano layers; Vapor sources; Atomic layer deposition

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