Characterization of Al0.047Ga0.953Sb layers grown on GaSb using reciprocal space maps

Structures of Al0.047Ga0.953Sb layers on GaSb (100) substrates were studied by high resolution X-ray diffraction (HRXRD) using reciprocal space maps (RSM) and rocking curves around the (004) and (115) reflections. The layers were grown at 450 °C with a supersaturation of 10 °C in a conventional Liquid Phase Epitaxy (LPE) system varying the growth time from 1 to 4 min resulting in an increment of thickness. It was found that tilt, relaxation and dislocation density of the layers can be calculated using its rocking curves and reciprocal space mapping and it is found that these characteristics are influenced by the thickness of layer. © 2015 Elsevier B.V. All rights reserved.

Epitaxial growth; GaSb based alloys; III-V compounds; Lattice relaxation; Layer tilt; Reciprocal space mapping Aluminum; Epitaxial growth; Gallium; Mapping; X ray diffraction; X ray diffraction analysis; Dislocation densities; High-resolution x-ray diffraction; III-V compounds; Lattice relaxation; Layer tilt; Reciprocal space mapping; Reciprocal space maps; Rocking curves; Gallium alloys

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