Some experiments on the growth of InTlSb by LPE
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InTlSb solid solutions have been proposed as new materials to extend the IR detecting capabilities offered by III-V compounds and there have been several reports about their predicted properties and of its growth by MBE and OMCVD. In this work two types of experiments were done. First, the results of attempts to obtain the binary compound TlSb from liquids with a stoichiometric composition are reported. Second, the determination of some liquidus points of the ternary solution and the results of attempts of growing the ternary alloy In1-xTlxSb by LPE on InSb substrates are also reported. Reflectance, X-ray diffraction and EDX measurements show that the epitaxial layers are InSb. Tl incorporation into the solid could not be detected by these techniques. © 2002 Published by Elsevier Science B.V.
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A1. Solidification; A3. Liquid phase epitaxy; B2. Semiconducting III-V materials Energy dispersive spectroscopy; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting indium compounds; Solid solutions; Solidification; Stoichiometry; Substrates; Ternary systems; X ray diffraction analysis; Binary compounds; Ternary solutions; Liquid phase epitaxy
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