selected publications

• article

  • Characterization of n-GaN / p-GaAs NP heterojunctions.  Superlattices and Microstructures.  136:-. 2019-01-01
  • Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy.  Journal of Magnetism and Magnetic Materials.  475:715-720. 2019-01-01
  • Unhealthy levels of phthalates and bisphenol a in mexican pregnant women with gestational diabetes and its association to altered expression of miRNAs involved with metabolic disease 2019-01-01
  • InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates.  Physica E: Low-Dimensional Systems and Nanostructures.  95:22-26. 2018-01-01
  • Nanowire Y-junction formation during self-faceting on high-index GaAs substrates.  RSC Advances.  7:17813-17818. 2017-01-01
  • Effects of growth temperature on the incorporation of nitrogen in GaNAs layers.  Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics.  34:-. 2016-01-01
  • New orientations in the stereographic triangle for self-assembled faceting.  AIP Advances.  6:-. 2016-01-01
  • Photoreflectance and raman study of surface electric states on AlGaAs/GaAs heterostructures.  Journal of Spectroscopy.  2016:-. 2016-01-01
  • Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy.  Applied Surface Science.  333:92-95. 2015-01-01
  • Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films.  Journal of Crystal Growth.  378:105-108. 2013-01-01
  • Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE.  Journal of Crystal Growth.  378:295-298. 2013-01-01
  • Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature.  Journal of Crystal Growth.  347:77-81. 2012-01-01
  • Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics.  30:-. 2012-01-01
  • As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A.  Journal of Crystal Growth.  316:149-152. 2011-01-01
  • Polarization and excitation dependence of photoluminescence of InAs quantum wires and dots grown on GaAs(6̄3̄1̄).  Japanese Journal of Applied Physics.  50:-. 2011-01-01
  • Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy.  Physica Status Solidi (C) Current Topics in Solid State Physics.  8:282-284. 2011-01-01
  • Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.  Nanotechnology.  21:-. 2010-01-01
  • Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates.  Physica Status Solidi (A) Applications and Materials Science.  206:836-841. 2009-01-01
  • Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments.  Journal of Crystal Growth.  311:1666-1670. 2009-01-01
  • Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(1 0 0) substrates.  Journal of Crystal Growth.  311:1451-1455. 2009-01-01
  • Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell.  Journal of Crystal Growth.  311:1650-1654. 2009-01-01
  • Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  26:1093-1096. 2008-01-01
  • Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures.  Microelectronics Journal.  39:1284-1285. 2008-01-01
  • SIMS characterization of segregation in InAs/GaAs heterostructures.  Applied Surface Science.  255:1341-1344. 2008-01-01
  • Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy.  Microelectronics Journal.  39:1248-1250. 2008-01-01
  • Study of optical properties of GaAsN layers prepared by molecular beam epitaxy.  Journal of Crystal Growth.  301-302:565-569. 2007-01-01
  • Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy.  Journal of Crystal Growth.  301-302:884-888. 2007-01-01
  • Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates.  Physica E: Low-Dimensional Systems and Nanostructures.  32:139-143. 2006-01-01
  • Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1591-1594. 2006-01-01
  • Structure and homoepitaxial growth of GaAs(6 3 1).  Applied Surface Science.  252:5530-5533. 2006-01-01
  • Study of the homoepitaxial growth of GaAs on (631) oriented substrates.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures.  24:1568-1571. 2006-01-01
  • Molecular beam epitaxial growth of GaAs on (631) oriented substrates.  Japanese Journal of Applied Physics, Part 2: Letters.  44:L1556-L1559. 2005-01-01
  • Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  41:L916-L918. 2002-01-01
  • Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter.  Journal of Physics D: Applied Physics.  35:1408-1413. 2002-01-01
  • AlGaAs/GaAs two-dimensional electron gas structures studied by photoreflectance spectroscopy.  Revista Mexicana de Fisica.  47:548-552. 2001-01-01
  • Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers.  Thin Solid Films.  373:37-40. 2000-01-01
  • GaAs surface oxide desorption by annealing in ultra high vacuum.  Thin Solid Films.  373:159-163. 2000-01-01
  • Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment.  Thin Solid Films.  373:33-36. 2000-01-01
  • Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates.  Physica Status Solidi (B) Basic Research.  220:99-109. 2000-01-01
  • Reduction in the crystal defect density of ZnSe layers grown by molecular beam epitaxy.  Revista Mexicana de Fisica.  46:148-152. 2000-01-01
  • Study of the GaAs surface oxide desorption process by annealing in ultra high vacuum conditions.  Revista Mexicana de Fisica.  46:152-158. 2000-01-01
  • Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers.  Diffusion and Defect Data. Pt A Defect and Diffusion Forum.  173:31-46. 1999-01-01
  • Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance.  Journal of Applied Physics.  86:425-429. 1999-01-01
  • Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs.  Journal of Physics D: Applied Physics.  32:1293-1301. 1999-01-01
  • Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients.  Applied Surface Science.  151:271-279. 1999-01-01
  • Two-dimensional growth mode promotion of ZnSe on Si(1 1 1) by using a nitrogen substrate surface treatment.  Journal of Crystal Growth.  201:518-523. 1999-01-01
  • Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD.  Journal of Crystal Growth.  194:301-308. 1998-01-01
  • Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures.  Applied Surface Science.  134:95-102. 1998-01-01
  • Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers.  Journal of Applied Physics.  84:1551-1557. 1998-01-01
  • Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe.  Electronics Letters.  34:1791-1793. 1998-01-01
  • Structural, optical and electrical characteristics of yttrium oxide films deposited by laser ablation.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  16:3305-3310. 1998-01-01
  • Study of the initial growth process of ZnSe on Si(111) by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  36:L1153-L1156. 1997-01-01

• conference paper

  • Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG.  Animal. A57-A62. 2013-01-01
  • Effect of the surface on optical properties of AlGaAs/GaAs heterostructures with double 2-DEG.  Materials Research Society Symposium Proceedings. A57-A62. 2013-01-01
  • Optical and electrical study of cap layer effect in QHE devices with double-2DEG.  Materials Research Society Symposium Proceedings. 31-36. 2013-01-01
  • Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy.  Physica E: Low-Dimensional Systems and Nanostructures. 2571-2574. 2010-01-01
  • Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01
  • Preliminary evaluation of quantum hall effect devices by photoreflectance spectroscopy.  19th IMEKO World Congress 2009. 1906-1910. 2009-01-01
  • InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy.  Physica Status Solidi (A) Applications and Materials Science. 390-399. 2007-01-01
  • Self-assembly of nanostructures on (631)-oriented GaAs substrates.  AIP Conference Proceedings. 210-215. 2007-01-01
  • Recent measurements of the quantum hall effect in AlGaAs/GaAs heterostructures to obtain a resistance standard.  2006 3rd International Conference on Electrical and Electronics Engineering. -. 2006-01-01
  • Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard.  2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
  • Photoreflectance investigations of HEMT structures grown by MBE.  Journal of Crystal Growth. 591-595. 2005-01-01
  • Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy.  Applied Surface Science. 204-208. 2004-01-01
  • Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures.  Microelectronics Journal. 521-523. 2003-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  Journal of Crystal Growth. 236-242. 2003-01-01
  • Study of the optical and structural properties of GaN films grown on Si substrates with a SiC layer.  Thin Solid Films. 68-72. 2003-01-01
  • Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100).  Thin Solid Films. 63-67. 2003-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 347-348. 2002-01-01
  • Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110).  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1567-1571. 2001-01-01
  • Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates.  Journal of Crystal Growth. 639-644. 2001-01-01
• Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs.  Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01