Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures
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InAs layers with thickness of ∼ 1 monolayer (δ-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the δ-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs δ-layers embedded in between 60 nm-thick GaAs barriers, such that the electron wave functions do not overlap each other, as we verified with a model of a square quantum well (SQW), which help us to calculate also the well width. © 2008 Elsevier Ltd. All rights reserved.
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In segregation; InAs; MBE; Quantum wells Gallium alloys; Indium arsenide; Light emission; Luminescence; Mass spectrometry; Secondary ion mass spectrometry; Segregation (metallography); Semiconducting gallium; Semiconducting indium; Semiconductor quantum wires; Different substrates; Electron wave functions; Electronic transitions; In segregation; In segregations; InAs; MBE; Optical characterizations; Photo-luminescence; Quantum wells; Secondary-ion mass spectroscopies; Well widths; Semiconductor quantum wells
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