publication venue for
- TO-phonon anisotropies in a highly doped InP (001) grating structure. 119:-. 2021-01-01
- Terahertz emission from gradient InGaAs surfaces. 119:-. 2021-01-01
- Understanding the interfacial behavior of lysozyme on Au (111) surfaces with multiscale simulations. 110:-. 2017-01-01
- Structural analysis of the epitaxial interface Ag/ZnO in hierarchical nanoantennas. 109:-. 2016-01-01
- Charge tuning in [111] grown GaAs droplet quantum dots. 105:-. 2014-01-01
- Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods. 105:-. 2014-01-01
- Exciton dynamics in WSe2 bilayers. 105:-. 2014-01-01
- High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation. 104:-. 2014-01-01
- Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy. 105:-. 2014-01-01
- Seebeck nanoantennas for solar energy harvesting. 105:-. 2014-01-01
- Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001). 102:-. 2013-01-01
- Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth. 101:-. 2012-01-01
- White metal-like omnidirectional mirror from porous silicon dielectric multilayers. 101:-. 2012-01-01
- Optical anisotropies of Si grown on step-graded SiGe(110) layers. 96:-. 2010-01-01
- Tailoring the magnetic anisotropy in CoRh nanoalloys. 95:-. 2009-01-01
- Three-dimensional spatial resolution of the nonlinear photoemission from biofunctionalized porous silicon microcavity. 94:-. 2009-01-01
- Fluorescence tuning of confined molecules in porous silicon mirrors. 91:-. 2007-01-01
- Nonlinear behavior of the energy gap in Ge1-x Snx alloys at 4 K. 91:-. 2007-01-01
- High-efficiency photovoltaic devices based on annealed poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1- phenyl- (6,6) C61 blends. 87:-. 2005-01-01
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Determination of the optical energy gap of Ge1-xSnx alloys with 0
- Cables of BN-insulated B-C-N nanotubes. 82:1275-1277. 2003-01-01
- Ge1-xSnx alloys pseudomorphically grown on Ge(001). 83:4942-4944. 2003-01-01
- In situ observation of stress relaxation in CdTe/ZnTe heterostructures by reflectance-difference spectroscopy. 78:3615-3617. 2001-01-01
- Size distribution of a metallic polydispersion through capacitive measurements in a sedimentation experiment. 79:406-408. 2001-01-01
- Influence of growth direction on order-disorder transition in (GaAs)1-x(Ge)2x semiconductor alloys. 77:2497-2499. 2000-01-01
- Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope. 73:1802-1804. 1998-01-01
- Excitonic transitions in (GaAs)1-x(Ge2)x/GaAs multilayers grown by magnetron sputtering. 72:94-96. 1998-01-01
- Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes. 68:1186-1188. 1996-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). 68:441-443. 1996-01-01
- Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes. 1186-. 1995-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). 19-. 1995-01-01
- Electrolytical diffusion of antimony in silicon. 44:1073-1075. 1984-01-01
- Emission properties in electrolytically prepared CdTe p-n junctions. 39:433-434. 1981-01-01
- Measurements of submicron hole diffusion lengths in GaAs by a photovoltaic technique. 38:442-444. 1981-01-01
- Minority carrier diffusion length measurements in CdTe by a photocurrent technique. 36:469-471. 1980-01-01