Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001)
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abstract
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We report on the use of reflectance difference (RD) spectroscopy aimed to detect and quantify the degree of strain in thin Si films grown on top of misoriented Si1-xCx (001), where it was found that the Si layers are compressively strained. It is demonstrated that RD spectroscopy is suitable for in situ monitoring of strained thin Si films growing on vicinal substrates. © 2013 American Institute of Physics.
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funding provided via
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Austrian Federal Ministry of Economy, Family and Youth, BMWFJ Grant
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Christian Doppler Forschungsgesellschaft, CDG Grant
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Consejo Nacional de Ciencia y Tecnología, CONACYT: 130009, 79635, 81316 Grant
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Japan Society for the Promotion of Science, JSPS: 23760011 Grant
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Ministry of Education, Culture, Sports, Science and Technology, MEXT Grant
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Research
keywords
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In-situ monitoring; Reflectance differences; Si films; Si layer; Strained-Si; Vicinal substrates; Film growth; Silicon
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