abstract

• Macroreflectance and microreflectance difference spectroscopies have been used to measure the strain induced optical anisotropies of semiconductor structures comprised of strained Si(110) thin films deposited on top of step-graded SiGe virtual substrates. The stress relaxation mechanism mainly occurs by the introduction of microtwin formation, whose fluctuation depends strongly on growth conditions. Correlations of such optical diagnostics with x-ray diffraction measurements and atomic force microscopy images, allow for the in situ study of the strain within both the top Si layer and the SiGe underneath with an spatial resolution of at least 5 μm. © 2010 American Institute of Physics.

authors

• Arimoto K.
• Balderas Navarro Raúl Eduardo
• Castro García Ricardo
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• Nakagawa K.
• Nakajima K.
• Sawano K.
• Shiraki Y.
• Usami N.
• Villalobos-Aguilar O.

publication date

• 2010-01-01

funding provided via

• C08-FAI-10-27.63  Grant
• Consejo Nacional de Ciencia y Tecnología, CONACYT: 23962, 79635, 81316  Grant

published in

• Applied Physics Letters  Journal

keywords

• Atomic force microscopy; Optical anisotropy; Silicon on insulator technology; Stress relaxation; Substrates; X ray diffraction; Difference spectroscopy; Growth conditions; Optical diagnostics; Relaxation mechanism; Semiconductor structure; SiGe virtual substrates; Spatial resolution; X-ray diffraction measurements; Si-Ge alloys

Digital Object Identifier (DOI)

• 10.1063/1.3339881

start page

end page

volume

• 96

issue

• 9