abstract
-
The first stages of epitaxial growth of CdTe on ZnTe and ZnTe on CdTe are monitored with reflectance difference spectroscopy. Spectroscopic reflectance difference data show strong optical anisotropy responses at the critical points of the bulk dielectric function at the E0, E1, and E1 Δ1 interband transitions of ZnTe, respectively, CdTe, which indicate that anisotropic in-plane strain occurs during epitaxial growth. Applying a model it is possible to determine the in-plane strain due to the disbalance of 60° dislocations along [11̄0] and [110]. Kinetic reflectance difference data taken at the Et transition of the respective material exhibit with an accuracy of one monolayer the onset of the formation of misfit dislocations for these material systems. © 2001 American Institute of Physics.
-
The first stages of epitaxial growth of CdTe on ZnTe and ZnTe on CdTe are monitored with reflectance difference spectroscopy. Spectroscopic reflectance difference data show strong optical anisotropy responses at the critical points of the bulk dielectric function at the E0, E1, and E1 %2b Δ1 interband transitions of ZnTe, respectively, CdTe, which indicate that anisotropic in-plane strain occurs during epitaxial growth. Applying a model it is possible to determine the in-plane strain due to the disbalance of 60° dislocations along [11̄0] and [110]. Kinetic reflectance difference data taken at the Et transition of the respective material exhibit with an accuracy of one monolayer the onset of the formation of misfit dislocations for these material systems. © 2001 American Institute of Physics.
... more
