Emission properties in electrolytically prepared CdTe p-n junctions

In this work p-n CdTe junctions have been prepared by the outdiffusion of Cd assisted by light using nCdTe electrodes in an electrolytic cell configuration. After removing the semiconductor from the electrolyte, electroluminescence experiments were performed in order to study the radiative processes that take place in these photoelectrolytically prepared devices. The observed electroluminescent lines could be explained by supposing two radiative transitions: from Cl impurity level (which is the dopant of the nCdTe) into a VCd-Sn complex, and from the conduction band into a level corresponding to the Cd vacancy. Their TO phonon replicas were also observed.

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