selected publications
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letter
- New ordering of the InAs growth through high-temperature treatment of the GaAs (100) substrates. Japanese Journal of Applied Physics, Part 2: Letters. L410-L413. 2003-01-01
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article
- Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy. Materials Science in Semiconductor Processing. 142:-. 2022-01-01
- Analysis of thermodynamic conditions to grow GaAsP epitaxial layers by LPE on GaAs and GaP substrates. MRS Advances. -. 2020-01-01
- Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates. Physica Status Solidi (A) Applications and Materials Science. 217:-. 2020-01-01
- GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 124:-. 2020-01-01
- InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates. Physica E: Low-Dimensional Systems and Nanostructures. 95:22-26. 2018-01-01
- Self-ordering of InAs nanostructures on (631)A/B GaAs substrates. Japanese Journal of Applied Physics. 57:-. 2018-01-01
- Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy. Journal of Crystal Growth. 477:212-216. 2017-01-01
- Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy. Applied Surface Science. 333:92-95. 2015-01-01
- Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure. Journal of Crystal Growth. 425:85-88. 2015-01-01
- Visible Luminescence of Dedoped DBU-Treated PEDOT:PSS Films. Journal of Physical Chemistry C. 119:19305-19311. 2015-01-01
- Sn doped GaSb grown by liquid phase epitaxy. Thin Solid Films. 548:168-170. 2013-01-01
- Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE. Journal of Crystal Growth. 378:295-298. 2013-01-01
- Encapsulation of the fullerene derivative [6,6]-Phenyl-C 61-butyric acid methyl ester inside micellar structures. Journal of Physical Chemistry C. 113:13677-13682. 2009-01-01
- Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates. Physica Status Solidi (A) Applications and Materials Science. 206:836-841. 2009-01-01
- Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell. Journal of Crystal Growth. 311:1650-1654. 2009-01-01
- Influence of the GaAs substrate orientation on the composition of GaxIn1 - xP (x ≈ 0.5) grown by LPE and MOCVD. Thin Solid Films. 516:8092-8095. 2008-01-01
- Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26:1093-1096. 2008-01-01
- P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE. Journal of Crystal Growth. 301-302:84-87. 2007-01-01
- Investigation of the composition-pulling or lattice-latching effect in LPE. Journal of Crystal Growth. 277:138-142. 2005-01-01
- Influence of baking on the photoluminescence spectra of In 1-xGaxAsyP1-y solid solutions grown on Inp substrates. Revista Mexicana de Fisica. 50:216-220. 2004-01-01
- Investigation of the phase diagram of the Pb-Ga-Sb system. Thin Solid Films. 461:233-236. 2004-01-01
- Some experiments on the growth of InTlSb by LPE. Journal of Crystal Growth. 241:101-107. 2002-01-01
- Control of the critical supercooling in LPE. Journal of Electronic Materials. 29:1402-1405. 2000-01-01
- Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases. Journal of Electronic Materials. 28:959-962. 1999-01-01
- Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE. Thin Solid Films. 340:24-27. 1999-01-01
- A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers. Journal of Electronic Materials. 27:1003-1004. 1998-01-01
- AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions. Crystal Research and Technology. 33:457-463. 1998-01-01
- Obtención e investigación de heteroestucturas láser InGaAsP/GaAs e InGaAsP/InP con emisión de onda de 0.8 μm y 1.3 μm. Revista Mexicana de Fisica. 44:282-289. 1998-01-01
- InGaAsSb growth from Sb-rich solutions. Journal of Crystal Growth. 180:34-39. 1997-01-01
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conference paper
- Estimation of the instable composition areas and its dependence on the thickness of GalnAsSb layers grown on different substrates. Journal of Physics: Conference Series. -. 2017-01-01
- Quantum dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates. Journal of Physics: Conference Series. -. 2011-01-01
- Infrared photoluminescence of composite films containing quasi-isolated muitiwalled carbon nanotubes and carbon nanoshells. Journal of Nanoscience and Nanotechnology. 4352-4356. 2010-01-01
- GaIn as Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE). Journal of Physics: Conference Series. -. 2009-01-01
- GaSb grown from Sn solvent at low temperatures by LPE. Journal of Physics: Conference Series. -. 2009-01-01
- Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1503-1507. 2004-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. Journal of Crystal Growth. 201-207. 2003-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
- Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01