selected publications
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article
- High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE. Infrared Physics and Technology. 79:32-35. 2016-01-01
- Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy. Thin Solid Films. 519:3029-3031. 2011-01-01
- Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn). Physica B: Condensed Matter. 404:4543-4545. 2009-01-01
- Influence of the GaAs substrate orientation on the composition of GaxIn1 - xP (x ≈ 0.5) grown by LPE and MOCVD. Thin Solid Films. 516:8092-8095. 2008-01-01
- Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn. Physica E: Low-Dimensional Systems and Nanostructures. 40:883-885. 2008-01-01
- Growth of quantum-well heterostructures by liquid phase epitaxy. Critical Reviews in Solid State and Materials Sciences. 31:1-13. 2006-01-01
- Investigation of the composition-pulling or lattice-latching effect in LPE. Journal of Crystal Growth. 277:138-142. 2005-01-01
- Influence of baking on the photoluminescence spectra of In 1-xGaxAsyP1-y solid solutions grown on Inp substrates. Revista Mexicana de Fisica. 50:216-220. 2004-01-01
- Investigation of the phase diagram of the Pb-Ga-Sb system. Thin Solid Films. 461:233-236. 2004-01-01
- Some experiments on the growth of InTlSb by LPE. Journal of Crystal Growth. 241:101-107. 2002-01-01
- Control of the critical supercooling in LPE. Journal of Electronic Materials. 29:1402-1405. 2000-01-01
- Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases. Journal of Electronic Materials. 28:959-962. 1999-01-01
- Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE. Thin Solid Films. 340:24-27. 1999-01-01
- A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers. Journal of Electronic Materials. 27:1003-1004. 1998-01-01
- AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions. Crystal Research and Technology. 33:457-463. 1998-01-01
- InGaAsSb growth from Sb-rich solutions. Journal of Crystal Growth. 180:34-39. 1997-01-01
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conference paper
- Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy. Thin Solid Films. 700-702. 2011-01-01
- Quantum dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates. Journal of Physics: Conference Series. -. 2011-01-01
- GaIn as Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE). Journal of Physics: Conference Series. -. 2009-01-01
- GaSb grown from Sn solvent at low temperatures by LPE. Journal of Physics: Conference Series. -. 2009-01-01
- Multicomponent Sb-based solid solutions grown from Sb-rich liquid phases. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. 37-40. 1997-01-01