Journal of Crystal Growth Journal

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J Cryst Growth

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Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters. 589:-. 2022-01-01
An algorithm for the in situ analysis of optical reflectance anisotropy spectra. 515:9-15. 2019-01-01
Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE. 477:59-64. 2017-01-01
Strain and anisotropy effects studied in InAs/GaAs(2 2 1) quantum dashes by Raman spectroscopy. 477:212-216. 2017-01-01
Tuning emission in violet, blue, green and red in cubic GaN/InGaN/GaN quantum wells. 435:110-113. 2016-01-01
Bulk lattice parameter and band gap of cubic InXGa1-XN (001) alloys on MgO (100) substrates. 418:120-125. 2015-01-01
Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring. 425:21-24. 2015-01-01
Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure. 425:85-88. 2015-01-01
Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures. 378:100-104. 2013-01-01
MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures. 378:88-91. 2013-01-01
Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films. 378:105-108. 2013-01-01
Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE. 378:295-298. 2013-01-01
Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature. 347:77-81. 2012-01-01
As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A. 316:149-152. 2011-01-01
Controlled growth of excitonpolariton microcavities using in situ spectral reflectivity measurements. 323:56-59. 2011-01-01
In situ measurements of the critical thickness for strain relaxation in β-GaN/MgO structures. 311:1302-1305. 2009-01-01
Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments. 311:1666-1670. 2009-01-01
Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(1 0 0) substrates. 311:1451-1455. 2009-01-01
Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell. 311:1650-1654. 2009-01-01
P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE. 301-302:84-87. 2007-01-01
Study of optical properties of GaAsN layers prepared by molecular beam epitaxy. 301-302:565-569. 2007-01-01
Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy. 301-302:884-888. 2007-01-01
In-plane and out-of-plane lattice parameters of [1 1 n] epitaxial strained layers. 291:340-347. 2006-01-01
On the structure of nanorods and nanowires with pentagonal cross-sections. 286:162-172. 2006-01-01
Beyond Archimedean solids: Star polyhedral gold nanocrystals. 285:681-691. 2005-01-01
Investigation of the composition-pulling or lattice-latching effect in LPE. 277:138-142. 2005-01-01
Effect of seeded surface area on crystal size distribution in glycine batch cooling crystallization: A seeding methodology. 270:624-632. 2004-01-01
Some experiments on the growth of InTlSb by LPE. 241:101-107. 2002-01-01
High purity GaSb grown by LPE in a sapphire boat. 208:27-32. 2000-01-01
Structural study of metastable (GaAs)1-x(Ge2)x thin films grown by RF magnetron sputtering. 197:783-788. 1999-01-01
Two-dimensional growth mode promotion of ZnSe on Si(1 1 1) by using a nitrogen substrate surface treatment. 201:518-523. 1999-01-01
Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD. 194:301-308. 1998-01-01
Growth of low-etch-pit density InSb single crystals by the Czochralski method. 178:422-425. 1997-01-01
InGaAsSb growth from Sb-rich solutions. 180:34-39. 1997-01-01
Investigation of the structural properties of MBE grown ZnSe/GaAs heterostructures. 175-176:571-576. 1997-01-01
Photoluminescence properties of Be-doped GaAs/(Al0.2Ga 0.8)0.51In0.49P heterostructures subjected to annealing processes 2005-01-01
Photoreflectance investigations of HEMT structures grown by MBE 2005-01-01
Influence of substrate conductivity on layer thickness in LPE GaAs 2004-01-01
Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy 2003-01-01
Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots 2003-01-01
Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates 2001-01-01
Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures 2021-01-01

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Elsevier Publisher
Elsevier B.V. Publisher