selected publications
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letter
- A simple heater for use in a thermoreflectance spectrometer. Review of Scientific Instruments. 2034-2035. 1991-01-01
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article
- Data reduction for spatially resolved reflectance anisotropy spectrometer. Review of Scientific Instruments. 94:-. 2023-01-01
- Fabricación y caracterización de pozos cuánticos para el estudio de la interacción luz-materia [Fabrication and characterization of quantum wells for the study of light-matter interaction]. CienciaUAT. 17:-. 2023-01-01
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Mid-infrared optical properties of non-magnetic-metal/CoFeB/MgO heterostructures.
Journal of Physics D: Applied Physics.
56:11-.
2023-01-01
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Remote sensing of atmospheric nitrogen dioxide in an urban area in central northern Mexico.
Atmósfera.
36:317-327.
2023-01-01
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Optical anisotropies of asymmetric double GaAs (001) quantum wells.
Physical Review B.
103:-.
2021-01-01
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Optical contrast in the near-field limit for structural characterization of graphene nanoribbons.
Applied Surface Science.
536:-.
2021-01-01
- TO-phonon anisotropies in a highly doped InP (001) grating structure. Applied Physics Letters. 119:-. 2021-01-01
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Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.
Applied Optics.
59:D39-D42.
2020-01-01
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An algorithm for the in situ analysis of optical reflectance anisotropy spectra.
Journal of Crystal Growth.
515:9-15.
2019-01-01
- Determination of the layered structure of baryta based heritage photographs by infrared ellipsometry. Journal of Cultural Heritage. 36:174-182. 2019-01-01
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Two-dimensional electron gas in a metal/amorphous oxide interface with spin-orbit interaction.
Physical Review B.
100:-.
2019-01-01
- Infrared Ellipsometry Analysis of Heritage Photographic Prints. Studies in Conservation. 63:466-476. 2018-01-01
- On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Applied Surface Science. 439:963-967. 2018-01-01
- Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). Applied Surface Science. 421:608-610. 2017-01-01
- Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy. International Journal of Modern Physics B. 30:-. 2016-01-01
- A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Measurement Science and Technology. 26:-. 2015-01-01
- Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy. Japanese Journal of Applied Physics. 54:-. 2015-01-01
- Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring. Journal of Crystal Growth. 425:21-24. 2015-01-01
- Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy. Applied Physics Letters. 105:-. 2014-01-01
- Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth. APL Materials. 2:-. 2014-01-01
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Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy.
Journal of Applied Physics.
114:-.
2013-01-01
- Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001). Applied Physics Letters. 102:-. 2013-01-01
- Effects of substrate orientation on the optical anisotropy spectra of GaN/AIN/Si heterostructures in the energy range from 2.0 to 3 5ev. Journal of Applied Physics. 111:-. 2012-01-01
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Micro reflectance difference techniques: Optical probes for surface exploration.
Physica Status Solidi (B) Basic Research.
249:1119-1123.
2012-01-01
- Polarization contrast linear spectroscopies for cubic semiconductors under stress: Macro- and micro-reflectance difference spectroscopies. Annalen der Physik (Leipzig). 523:121-128. 2011-01-01
- Optical anisotropies of Si grown on step-graded SiGe(110) layers. Applied Physics Letters. 96:-. 2010-01-01
- Microreflectance difference spectrometer based on a charge coupled device camera: Surface distribution of polishing-related linear defect density in GaAs (001). Applied Optics. 48:5713-5717. 2009-01-01
- One electron and discrete excitonic contributions to the optical response of semiconductors around E1 transition: Analysis in the reciprocal space. Journal of the Optical Society of America B: Optical Physics. 26:725-733. 2009-01-01
- Effect of reconstruction-induced strain on the reflectance difference spectroscopy of GaAs (001) around E1 and E1 Δ1 transitions. Physical Review B - Condensed Matter and Materials Physics. 75:-. 2007-01-01
- Methanofullerene elongated nanostructure formation for enhanced organic solar cells. Thin Solid Films. 516:52-57. 2007-01-01
- Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies. Physical Review Letters. 96:-. 2006-01-01
- Structure and homoepitaxial growth of GaAs(6 3 1). Applied Surface Science. 252:5530-5533. 2006-01-01
- Interfaces in Ga xIn 1-xAs ySb 1-yAl xGa 1-xAs ySb 1-ymulti- quantum-well heterostructures probed by transmittance anisotropy spectroscopy. Journal of Applied Physics. 98:-. 2005-01-01
- Lock-in amplifier-based rotating-analyzer spectroscopic ellipsometer with micro-controlled angular frequency. Revista Mexicana de Fisica. 51:274-283. 2005-01-01
- In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy. Applied Surface Science. 221:48-52. 2004-01-01
- Reflectance difference spectroscopy of GaAs(001) under a [110] uniaxial stress. Physical Review B - Condensed Matter and Materials Physics. 70:35306-1-035306-7. 2004-01-01
- Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components. Physical Review B - Condensed Matter and Materials Physics. 66:753151-753156. 2002-01-01
- Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components. Physical Review B - Condensed Matter and Materials Physics. 66:1-6. 2002-01-01
- Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 2: Letters. 41:L916-L918. 2002-01-01
- AlGaAs/GaAs two-dimensional electron gas structures studied by photoreflectance spectroscopy. Revista Mexicana de Fisica. 47:548-552. 2001-01-01
- Reflectance-difference spectroscopy of semi-insulating GaAs(110) around the fundamental gap. Physical Review B - Condensed Matter and Materials Physics. 64:-. 2001-01-01
- Linear electro-optic reflectance modulated spectra of GaAs (001) around E1 and E1 Δ1. Thin Solid Films. 373:207-210. 2000-01-01
- Linear electro-optic photoreflectance spectra of GaAs and CdTe around E1 and E1 Δ1. Physica Status Solidi (A) Applied Research. 175:45-50. 1999-01-01
- Model for the linear electro-optic reflectance-difference spectrum of gaas(001) around (formula presented) and (formula presented). Physical Review B - Condensed Matter and Materials Physics. 59:10234-10239. 1999-01-01
- Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance. Journal of Applied Physics. 86:425-429. 1999-01-01
- Photoreflectance spectroscopy of CdTe(001) around E1 and E1 Δ1: Linear electro-optic spectrum. Journal of Applied Physics. 86:2062-2065. 1999-01-01
- Strain in GaAs at the heterointerface of ZnSe/GaAs/GaAs. Journal of Physics D: Applied Physics. 32:1293-1301. 1999-01-01
- Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients. Applied Surface Science. 151:271-279. 1999-01-01
- Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures. Applied Surface Science. 134:95-102. 1998-01-01
- The effect of the photon recycling phenomena on the current gain characteristics of (GaAl)As-GaAs-GaAs heterojunction transistors. Revista Mexicana de Fisica. 44:68-72. 1998-01-01
- Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100). Solid State Communications. 98:479-483. 1996-01-01
- Reflectance anisotropy of GaAs(100): Dislocation-induced piezo-optic effects. Physical Review B - Condensed Matter and Materials Physics. 54:10726-10735. 1996-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). Applied Physics Letters. 68:441-443. 1996-01-01
- Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7-3.3 eV). Applied Physics Letters. 19-. 1995-01-01
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Temperature-dependent optical band gap of the metastable zinc-blende structure -GaN.
Physical Review B.
50:8433-8438.
1994-01-01
- A spectrometer for the measurement of reflectance-difference spectra. Review of Scientific Instruments. 64:2147-2152. 1993-01-01
- Thermoreflectance studies in Cd1-xFexTe thin films. Journal of Applied Physics. 74:5154-5158. 1993-01-01
- Optical-reflectance anisotropy in epitaxial metastable (GaAs)1-x(Si2)x(001) alloys: A probe for the zinc-blende to diamond structural transition. Physical Review B. 43:14035-14039. 1991-01-01
- Electro-optic effects in the optical anisotropies of (001) GaAs. Physical Review B. 40:1426-1429. 1989-01-01
- Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs. Solid State Communications. 64:809-811. 1987-01-01
- Optical absorption in single-crystal metastable (GaAs)1-x(Ge2)x alloys: Evidence for a Zinc-blende-diamond order-disorder transition. Physical Review Letters. 50:1466-1469. 1983-01-01
- Measurements of submicron hole diffusion lengths in GaAs by a photovoltaic technique. Applied Physics Letters. 38:442-444. 1981-01-01
- Minority carrier diffusion length measurements in CdTe by a photocurrent technique. Applied Physics Letters. 36:469-471. 1980-01-01
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High-efficiency GaAsGa1-xAlxAs single-heterostructure light emitting diodes.
Solid State Electronics.
22:115-116.
1979-01-01
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Study of the interface changes during operation of nCdTe-electrolyte solar cells.
Journal of Applied Physics.
50:5391-5396.
1979-01-01
- Theoretical calculations of the minority-carrier diffusion length in high-internal-quantum-efficiency GaAs. Journal of Applied Physics. 50:4156-4158. 1979-01-01
- Internal quantum efficiency measurements for GaAs light-emitting diodes. Journal of Applied Physics. 49:3565-3570. 1978-01-01
- The electroluminescent properties of Zn-diffused SH GaAs light emitting diodes. International Journal of Electronics. 40:241-250. 1976-01-01
... more -
conference paper
- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings. -. 2018-01-01
- Real-time optical monitoring of semiconductor epitaxial growth. AIP Conference Proceedings. -. 2018-01-01
- Real-time reflectance anisotropy spectroscopy of MBE AlAs/GaAs interfaces. Latin America Optics and Photonics Conference, LAOP 2014. -. 2014-01-01
- A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution. Review of Scientific Instruments. -. 2012-01-01
- Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy. IEEExPO 2009 - 3rd Conference of University of Guanajuato IEEE Students Chapter. 8-11. 2009-01-01
- Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2561-2564. 2008-01-01
- Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001). Physica Status Solidi (C) Current Topics in Solid State Physics. 2573-2577. 2008-01-01
- Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2565-2568. 2008-01-01
- Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions. Physica Status Solidi (C) Current Topics in Solid State Physics. 2591-2594. 2008-01-01
- Reconstruction induced surface strain in GaAs (001) surfaces characterized by reflectance modulated spectroscopies. AIP Conference Proceedings. 11-12. 2007-01-01
- Reflectance difference spectrometer based on the use of a CCD camera. Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
- Reflectance-difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs. Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
- Multichannel holograms with some applications in image processing. Proceedings of SPIE - The International Society for Optical Engineering. -. 2006-01-01
- Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas. Multiconference on Electronics and Photonics, MEP 2006. 4-7. 2006-01-01
- Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
- Photoreflectance investigations of HEMT structures grown by MBE. Journal of Crystal Growth. 591-595. 2005-01-01
- Continuous-wave operation up to 350K of optically-pumped antimony-based mid-infrared VCSELs. Proceedings of SPIE - The International Society for Optical Engineering. 77-87. 2004-01-01
- Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy. Applied Surface Science. 204-208. 2004-01-01
- Continuous-wave operation at room temperature diode-pumped antimony-based VCSEL emitting above 2 μm. Proceedings of LFNM 2003 - 5th International Workshop on Laser and Fiber-Optical Networks Modeling. 29-31. 2003-01-01
- Giant reflectance anisotropy of polar cubic semiconductors in the far infrared. Physica Status Solidi C: Conferences. 2982-2986. 2003-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. Journal of Crystal Growth. 201-207. 2003-01-01
- In situ optical monitoring of the interface strain relaxation of InGaAs/GaAs grown by molecular-beam epitaxy. Physica Status Solidi C: Conferences. 3017-3021. 2003-01-01
- Model for the strain-induced reflectance-difference spectra of InGaAs/GaAs (001) epitaxial layers. Physica Status Solidi C: Conferences. 2987-2991. 2003-01-01
- Strain induced optical anisotropies in zincblende semiconductors. Physica Status Solidi (B) Basic Research. 500-508. 2003-01-01
- Surface dynamics during MBE growth of GaAs(001) monitored by in-situ reflectance difference spectroscopy. Physica Status Solidi C: Conferences. 3012-3016. 2003-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
- Photoreflectance spectroscopy of AlGaAs/GaAs heterostructures with a two-dimensional electron gas system. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1238-1242. 2002-01-01
- Study of the crystal quality and Ga-segregation in ZnSe films grown by molecular beam epitaxy on AlxGa1-xAs and InxGa1-xAs buffer layers on GaAs substrates. Journal of Crystal Growth. 639-644. 2001-01-01
- Reflectance-difference spectroscopy: a technique for characterization of dislocations in semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. 250-260. 1996-01-01
- Optical anisotropies in electromodulation. Proceedings of SPIE - The International Society for Optical Engineering. 31-38. 1990-01-01
- ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1- XCDXTE.. J VAC SCI TECHNOL. 157-160. 1982-01-01
... more - Stress-induced optical anisotropies measured by modulated reflectance. Semiconductor Science and Technology. R35-R46. 2004-01-01