abstract

• For zinc blende semiconductors, such as InP, the Raman selection rules for a backscattering configuration from the (001) surface forbid the transversal optical (TO) phonon mode, whereas the longitudinal optical mode is allowed. However, when InP is highly doped with Si atoms, InP-Si clusters with the reduced C3v symmetry allow TO modes in the Raman spectrum with the backscattering configuration. Here, we demonstrate that the amplitude of the TO modes can be modulated spatially by using a highly doped InP grating. By exciting the sample with a laser linearly polarized parallel and perpendicular to the grating grooves, we observe a change in amplitude of the phonon optical response for the TO mode. © 2021 Author(s).

authors

• Castro García Ricardo
• Espinosa-Cuellar L.D.
• Flores Camacho José Manuel
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe

publication date

• 2021-01-01

published in

• Applied Physics Letters  Journal

keywords

• Backscattering; III-V semiconductors; Indium phosphide; Phonons; Silicon; Zinc sulfide; Grating structures; Longitudinal optical modes; Optical modes; Optical phonon modes; Optical phonons; Optical response; Raman selection rules; Si atoms; Si clusters; Zincblende semiconductors; Semiconducting indium phosphide

Digital Object Identifier (DOI)

• 10.1063/5.0062251

PubMed ID

start page

end page

volume

• 119

issue

• 14