abstract

• We report on time-resolved Reflectance Anisotropy Spectroscopy (RAS) measurements carried out during the molecular beam epitaxial growth of GaAs (001). Growth started on a c(4x4) reconstructed surface which changed to (2x4) and then to (4x) as growth progressed. We found that reflectance anisotropy spectra comprise three components, each one with a specific physical origin and determine their time evolution as a function of epitaxil film thickness. We conclude that RAS is a powerful probe for the monitoring and potentially for the control of epitaxial growth. © 2018 Author(s).

authors

• Ariza Flores Augusto David
• Balderas Navarro Raúl Eduardo
• Guevara Macías Liliana Estela
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• López Estopier Rosa Elvia
• Núñez Olvera Oscar Fernando
• Ortega Gallegos Jorge

publication date

• 2018-01-01

published in

• AIP Conference Proceedings  Proceedings

Digital Object Identifier (DOI)

• 10.1063/1.5024495

start page

end page

volume

• 1934