Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 °C and 430 °C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 1016-1019 cm -3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. © 2008 Wiley-VCH Verlag GmbH %26amp; Co. KGaA.
We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 °C and 430 °C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 1016-1019 cm -3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Doped films; Doping levels; GaAs; GaAs(001); Growth conditions; Impurity level; In-situ; Optical probe; P-type; Reflectance difference spectroscopy; Reflectance differences; Crystal growth; Gallium alloys; Gallium arsenide; Molecular beam epitaxy; Molecular beams; Reflection; Semiconducting gallium; Doping (additives)

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