The effect of the photon recycling phenomena on the current gain characteristics of (GaAl)As-GaAs-GaAs heterojunction transistors

The effect of the photon recycling phenomena on the current gain characteristic of (GaAl)As-GaAs heterojunction transistors is studied. We found that, in the presence of such phenomena, the transistor common-emitter current gain depends strongly on the minority carriers diffusion length in the collector region. Furthermore, the transistor current gain is determined by an effective base diffusion length which is not constant, but depends on the base width. The results show that in order to optimize the transistor performance, the collector diffusion length must be as large as possible.

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