Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring
Article
-
- Overview
-
- Research
-
- Identity
-
- Additional Document Info
-
- View All
-
Overview
abstract
-
We report on real-time reflectance-difference (RD) spectroscopic measurements carried out during the homoepitaxial grow of GaAs under As overpressures in the range from PAs=6×10-7-5×10-6Torr. We found that the time-dependent RD spectrum is described in terms of two basic line shapes. One of these components is associated to the orthorhombic surface strain due to surface reconstruction while the second one has been assigned to surface composition. Results reported in this paper render RD spectroscopy as a powerful tool for the real-time monitoring of surface strains and its interplay with surface composition during growth. © 2015 Elsevier B.V. All rights reserved.
publication date
funding provided via
published in
Research
keywords
-
A.1 Characterization; A.1 Surface processes; A.3 Molecular beam epitaxy; B.2 Semiconducting III-V materials Epitaxial growth; Molecular beam epitaxy; Reflection; Strain; Growth monitoring; Real time monitoring; Reflectance difference spectroscopy; Reflectance differences; Semi conducting III-V materials; Spectroscopic measurements; Surface process; Surface strains; Semiconductor growth
Identity
Digital Object Identifier (DOI)
Additional Document Info
start page
end page
volume