abstract

• We report on the use of reflectance difference (RD) spectroscopy aimed to detect and quantify the degree of strain in thin Si films grown on top of misoriented Si1-xCx (001), where it was found that the Si layers are compressively strained. It is demonstrated that RD spectroscopy is suitable for in situ monitoring of strained thin Si films growing on vicinal substrates. © 2013 American Institute of Physics.

authors

• Arimoto K.
• Balderas Navarro Raúl Eduardo
• Flores Camacho José Manuel
• Furukawa H.
• Hingerl K.
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• Ramírez-Meléndez G.
• Stifter D.
• Ulloa-Castillo N.A.
• Usami N.
• Yamanaka J.

publication date

• 2013-01-01

funding provided via

• Austrian Federal Ministry of Economy, Family and Youth, BMWFJ  Grant
• Christian Doppler Forschungsgesellschaft, CDG  Grant
• Consejo Nacional de Ciencia y Tecnologí­a, CONACYT: 130009, 79635, 81316  Grant
• Japan Society for the Promotion of Science, JSPS: 23760011  Grant
• Ministry of Education, Culture, Sports, Science and Technology, MEXT  Grant

published in

• Applied Physics Letters  Journal

keywords

• In-situ monitoring; Reflectance differences; Si films; Si layer; Strained-Si; Vicinal substrates; Film growth; Silicon

Digital Object Identifier (DOI)

• 10.1063/1.4773560

start page

end page

volume

• 102

issue

• 1