selected publications
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article
- Near-field probing of surface plasmon polariton formation in imprinted gold nanoisland arrays. Journal of the Optical Society of America B: Optical Physics. 41:2631-2637. 2024-01-01
- Spin dynamics of 2-DEG Rashba-Dresselhaus spin-orbit systems: quantum propagators and semi-analytical analysis in low electron density. Physica Scripta. 99:-. 2024-01-01
- Spin-relaxation control by an applied electric field in double quantum wells. Physical Review Applied. 22:-. 2024-01-01
- Data reduction for spatially resolved reflectance anisotropy spectrometer. Review of Scientific Instruments. 94:-. 2023-01-01
- Fabricación y caracterización de pozos cuánticos para el estudio de la interacción luz-materia [Fabrication and characterization of quantum wells for the study of light-matter interaction]. CienciaUAT. 17:-. 2023-01-01
- Remote sensing of atmospheric nitrogen dioxide in an urban area in central northern Mexico. Atmósfera. 36:317-327. 2023-01-01
- Spin relaxation of conduction electrons in coupled quantum wells. Physical Review B. 108:-. 2023-01-01
- Photoluminescence of Double Quantum Wells: Asymmetry and Excitation Laser Wavelength Effects. Physica Status Solidi (B) Basic Research. 259:-. 2022-01-01
- Optical anisotropies of asymmetric double GaAs (001) quantum wells. Physical Review B. 103:-. 2021-01-01
- Optical contrast in the near-field limit for structural characterization of graphene nanoribbons. Applied Surface Science. 536:-. 2021-01-01
- TO-phonon anisotropies in a highly doped InP (001) grating structure. Applied Physics Letters. 119:-. 2021-01-01
- Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy. Applied Optics. 59:D39-D42. 2020-01-01
- An algorithm for the in situ analysis of optical reflectance anisotropy spectra. Journal of Crystal Growth. 515:9-15. 2019-01-01
- Differential reflectance contrast technique in near field limit: Application to graphene. AIP Advances. 9:-. 2019-01-01
- On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Applied Surface Science. 439:963-967. 2018-01-01
- Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity. Physical Review B. 96:-. 2017-01-01
- Note: A simple multi-channel optical system for modulation spectroscopies. Review of Scientific Instruments. 88:-. 2017-01-01
- Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces. Journal of Applied Physics. 122:-. 2017-01-01
- Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). Applied Surface Science. 421:608-610. 2017-01-01
- Structural Characterization of a Capillary Microfluidic Chip Using Microreflectance. Applied Spectroscopy. 71:1357-1362. 2017-01-01
- Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy. International Journal of Modern Physics B. 30:-. 2016-01-01
- A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Measurement Science and Technology. 26:-. 2015-01-01
- Characterization of Si3N4/Si(111) thin films by reflectance difference spectroscopy. Japanese Journal of Applied Physics. 54:-. 2015-01-01
- Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring. Journal of Crystal Growth. 425:21-24. 2015-01-01
- Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy. Applied Physics Letters. 105:-. 2014-01-01
- Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth. APL Materials. 2:-. 2014-01-01
- Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy. Journal of Applied Physics. 114:-. 2013-01-01
- Reflectance anisotropies of compressively strained Si grown on vicinal Si1-xCx(001). Applied Physics Letters. 102:-. 2013-01-01
- Effects of substrate orientation on the optical anisotropy spectra of GaN/AIN/Si heterostructures in the energy range from 2.0 to 3 5ev. Journal of Applied Physics. 111:-. 2012-01-01
- Micro reflectance difference techniques: Optical probes for surface exploration. Physica Status Solidi (B) Basic Research. 249:1119-1123. 2012-01-01
- Polarization contrast linear spectroscopies for cubic semiconductors under stress: Macro- and micro-reflectance difference spectroscopies. Annalen der Physik (Leipzig). 523:121-128. 2011-01-01
- Optical anisotropies of Si grown on step-graded SiGe(110) layers. Applied Physics Letters. 96:-. 2010-01-01
- Microreflectance difference spectrometer based on a charge coupled device camera: Surface distribution of polishing-related linear defect density in GaAs (001). Applied Optics. 48:5713-5717. 2009-01-01
- One electron and discrete excitonic contributions to the optical response of semiconductors around E1 transition: Analysis in the reciprocal space. Journal of the Optical Society of America B: Optical Physics. 26:725-733. 2009-01-01
- Effect of reconstruction-induced strain on the reflectance difference spectroscopy of GaAs (001) around E1 and E1 Δ1 transitions. Physical Review B - Condensed Matter and Materials Physics. 75:-. 2007-01-01
- Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies. Physical Review Letters. 96:-. 2006-01-01
- Interfaces in Ga xIn 1-xAs ySb 1-yAl xGa 1-xAs ySb 1-ymulti- quantum-well heterostructures probed by transmittance anisotropy spectroscopy. Journal of Applied Physics. 98:-. 2005-01-01
- Lock-in amplifier-based rotating-analyzer spectroscopic ellipsometer with micro-controlled angular frequency. Revista Mexicana de Fisica. 51:274-283. 2005-01-01
- In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy. Applied Surface Science. 221:48-52. 2004-01-01
- Reflectance difference spectroscopy of GaAs(001) under a [110] uniaxial stress. Physical Review B - Condensed Matter and Materials Physics. 70:35306-1-035306-7. 2004-01-01
- Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components. Physical Review B - Condensed Matter and Materials Physics. 66:753151-753156. 2002-01-01
- Photoreflectance-difference spectroscopy of GaAs (001) under [110] uniaxial stress: Linear and quadratic electro-optic components. Physical Review B - Condensed Matter and Materials Physics. 66:1-6. 2002-01-01
- Optical anisotropy of (001)-GaAs surface quantum wells. Physical Review B - Condensed Matter and Materials Physics. 64:-. 2001-01-01
- Reflectance-difference spectroscopy of semi-insulating GaAs(110) around the fundamental gap. Physical Review B - Condensed Matter and Materials Physics. 64:-. 2001-01-01
- High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si. Physica Status Solidi (B) Basic Research. 220:117-125. 2000-01-01
- Isotopic effects on the dielectric response of Si around the gap. Physical Review B - Condensed Matter and Materials Physics. 61:12946-12951. 2000-01-01
- Linear electro-optic reflectance modulated spectra of GaAs (001) around E1 and E1 Δ1. Thin Solid Films. 373:207-210. 2000-01-01
- Comment on “Ab initio calculation of excitonic effects in the optical spectra of semiconductors”. Physical Review Letters. 83:3970-. 1999-01-01
- Determination of the piezo-optical properties of semiconductors above the fundamental gap by means of reflectance difference spectroscopy. Journal of the Optical Society of America A: Optics and Image Science, and Vision. 16:568-573. 1999-01-01
- Dielectric function of NaV2O5 and its temperature dependence. Physica Status Solidi (B) Basic Research. 211:R3-R4. 1999-01-01
- Linear electro-optic photoreflectance spectra of GaAs and CdTe around E1 and E1 Δ1. Physica Status Solidi (A) Applied Research. 175:45-50. 1999-01-01
- Photoreflectance spectroscopy of CdTe(001) around E1 and E1 Δ1: Linear electro-optic spectrum. Journal of Applied Physics. 86:2062-2065. 1999-01-01
- Piezo-optical coefficients of znse and znte above the fundamental gap. Physical Review B - Condensed Matter and Materials Physics. 59:5581-5590. 1999-01-01
- Isotope effects on the electronic critical points of germanium: Ellipsometric investigation of the E1 and E1 Δ1 transitions. European Physical Journal B. 5:29-35. 1998-01-01
- Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap. Physica Status Solidi (A) Applied Research. 170:317-321. 1998-01-01
- Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100). Solid State Communications. 98:479-483. 1996-01-01
- Reflectance anisotropy of GaAs(100): Dislocation-induced piezo-optic effects. Physical Review B - Condensed Matter and Materials Physics. 54:10726-10735. 1996-01-01
- A spectrometer for the measurement of reflectance-difference spectra. Review of Scientific Instruments. 64:2147-2152. 1993-01-01
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conference paper
- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings. -. 2018-01-01
- Real-time optical monitoring of semiconductor epitaxial growth. AIP Conference Proceedings. -. 2018-01-01
- Real-time reflectance anisotropy spectroscopy of MBE AlAs/GaAs interfaces. Latin America Optics and Photonics Conference, LAOP 2014. -. 2014-01-01
- A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution. Review of Scientific Instruments. -. 2012-01-01
- Dots-in-a-well InGaAs based laser probed by photoreflectance-anisotropy spectroscopy. IEEExPO 2009 - 3rd Conference of University of Guanajuato IEEE Students Chapter. 8-11. 2009-01-01
- Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2561-2564. 2008-01-01
- Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001). Physica Status Solidi (C) Current Topics in Solid State Physics. 2573-2577. 2008-01-01
- Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs. Physica Status Solidi (C) Current Topics in Solid State Physics. 2565-2568. 2008-01-01
- Surface strain contributions to the lineshapes of reflectance difference spectra for one-electron and discrete-exciton transitions. Physica Status Solidi (C) Current Topics in Solid State Physics. 2591-2594. 2008-01-01
- Reconstruction induced surface strain in GaAs (001) surfaces characterized by reflectance modulated spectroscopies. AIP Conference Proceedings. 11-12. 2007-01-01
- Reflectance difference spectrometer based on the use of a CCD camera. Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
- Reflectance-difference Spectroscopy as an optical probe for the in situ determination of doping levels in GaAs. Proceedings of SPIE - The International Society for Optical Engineering. -. 2007-01-01
- Reflectance difference spectroscopy as an optical probe for the in situ determination of doping levels in gaas. Multiconference on Electronics and Photonics, MEP 2006. 4-7. 2006-01-01
- Giant reflectance anisotropy of polar cubic semiconductors in the far infrared. Physica Status Solidi C: Conferences. 2982-2986. 2003-01-01
- Model for the strain-induced reflectance-difference spectra of InGaAs/GaAs (001) epitaxial layers. Physica Status Solidi C: Conferences. 2987-2991. 2003-01-01
- Strain induced optical anisotropies in zincblende semiconductors. Physica Status Solidi (B) Basic Research. 500-508. 2003-01-01
- Reflectance-difference spectroscopy: a technique for characterization of dislocations in semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. 250-260. 1996-01-01
- Stress-induced optical anisotropies measured by modulated reflectance. Semiconductor Science and Technology. R35-R46. 2004-01-01