abstract

• The control of the spin state of electrons and holes in semiconductors is of fundamental importance for spintronics. Double quantum well (DQW) systems constitute excellent platforms that allow the modulation of the spin-relaxation times by changing the relative thicknesses of the wells to induce structural inversion asymmetry. This asymmetry, through the Rashba effect, modifies the spin-relaxation time of electron-spin pairs photogenerated in photoluminescence (PL) experiments. Besides the structural dependence, the modulation of the spin-relaxation time in a DQW can be controlled by external parameters, such as magnetic or electric fields. In the case of an external electric field, the relaxation time is modulated by the Rashba effect. Here, we report on PL experiments on (Al,Ga)As/GaAs/(Al,Ga)As DQWs under an external electric field applied perpendicular to the surface. We show that the spin-relaxation time of the photogenerated electron-hole pairs can be controlled by the electric field. The DQWs constitute excellent structures to tune the spin-relaxation times, and this opens the possibility of using such structures in optospintronic applications.

authors

• Biermann K.
• Lastras Martínez Luis Felipe
• Santos P.V.

publication date

• 2024-01-01

funding provided via

• Consejo Nacional de Humanidades, Ciencias y Tecnologías, Conahcyt, (FC 2016-02-2093)  Grant

published in

• Physical Review Applied  Journal

keywords

• Aluminum gallium arsenide; Electron spin resonance spectroscopy; Gallium compounds; Magnetic moments; Phase shift keying; Relaxation time; Spin dynamics; Spintronics; Structural relaxation; Double quantum-well; Double-quantum well systems; Electrons and holes; External electric field; Inversion asymmetry; Rashba effects; Relative thickness; Spin relaxation; Spin relaxation time; Spin state; Semiconductor quantum wells

Digital Object Identifier (DOI)

• 10.1103/PhysRevApplied.22.044026

PubMed ID

start page

end page

volume

• 22

issue

• 4