selected publications
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article
- Nonlocal Si δ-doping in horizontally-aligned GaAs nanowires. Surfaces and Interfaces. 56:-. 2025-01-01
- Theoretical investigation of the growth of GaAs on Si(001), Si(110), Si(111), Si(113) and Si(331). Surfaces and Interfaces. 44:-. 2024-01-01
- Three-Dimensional Coherence in Arrays of Parallel One-Dimensional Wigner Crystals. Journal of Physical Chemistry C. 128:20244-20252. 2024-01-01
- Asymmetric Wigner molecules in nanowire Y-junctions. Scientific Reports. 12:-. 2022-01-01
- Tunneling between parallel one-dimensional Wigner crystals. Scientific Reports. 12:-. 2022-01-01
- Wigner Crystal Stability in Nanowires under a Longitudinal Electric Field. Journal of Physical Chemistry C. 125:22044-22051. 2021-01-01
- Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy. Journal of Magnetism and Magnetic Materials. 475:715-720. 2019-01-01
- Many-electron effective potential in low-dimensional nanostructures: Towards understanding the Wigner crystallization. Physical Review B. 100:-. 2019-01-01
- Nanowire Y-junction formation during self-faceting on high-index GaAs substrates. RSC Advances. 7:17813-17818. 2017-01-01
- Wigner crystallization in quantum wires within the Yukawa approximation. Physical Review B. 95:-. 2017-01-01
- Effects of growth temperature on the incorporation of nitrogen in GaNAs layers. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- New orientations in the stereographic triangle for self-assembled faceting. AIP Advances. 6:-. 2016-01-01
- Structural characterization of AlGaAs:Si/GaAs (631) heterostructures as a function of As pressure. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy. Applied Surface Science. 333:92-95. 2015-01-01
- Si-doped AlGaAs/GaAs(6 3 1)A heterostructures grown by MBE as a function of the As-pressure. Journal of Crystal Growth. 425:85-88. 2015-01-01
- Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films. Journal of Crystal Growth. 378:105-108. 2013-01-01
- Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE. Journal of Crystal Growth. 378:295-298. 2013-01-01
- Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature. Journal of Crystal Growth. 347:77-81. 2012-01-01
- Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth. Applied Physics Letters. 101:-. 2012-01-01
- Optical and electrical properties of Si-doped GaAs films grown on (631)-oriented substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30:-. 2012-01-01
- Photoluminescence study of self-assembled GaAs quantum wires on (631)A-oriented GaAs substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30:-. 2012-01-01
- As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A. Journal of Crystal Growth. 316:149-152. 2011-01-01
- Polarization and excitation dependence of photoluminescence of InAs quantum wires and dots grown on GaAs(6̄3̄1̄). Japanese Journal of Applied Physics. 50:-. 2011-01-01
- Study of the conduction-type conversion in Si-doped (631)A GaAs layers grown by molecular beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics. 8:282-284. 2011-01-01
- Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments. Journal of Crystal Growth. 311:1666-1670. 2009-01-01
- Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26:1093-1096. 2008-01-01
- Optical characterization of InAs δ-layers grown by MBE at different substrate temperatures. Microelectronics Journal. 39:1284-1285. 2008-01-01
- SIMS characterization of segregation in InAs/GaAs heterostructures. Applied Surface Science. 255:1341-1344. 2008-01-01
- Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy. Microelectronics Journal. 39:1248-1250. 2008-01-01
- Study of optical properties of GaAsN layers prepared by molecular beam epitaxy. Journal of Crystal Growth. 301-302:565-569. 2007-01-01
- Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy. Journal of Crystal Growth. 301-302:884-888. 2007-01-01
- Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates. Physica E: Low-Dimensional Systems and Nanostructures. 32:139-143. 2006-01-01
- Structure and homoepitaxial growth of GaAs(6 3 1). Applied Surface Science. 252:5530-5533. 2006-01-01
- Study of the homoepitaxial growth of GaAs on (631) oriented substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24:1568-1571. 2006-01-01
- Molecular beam epitaxial growth of GaAs on (631) oriented substrates. Japanese Journal of Applied Physics, Part 2: Letters. 44:L1556-L1559. 2005-01-01
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conference paper
- Optical transitions in AlGaAs/GaAs quantum wires on GaAs(6 3 1) substrates studied by photoreflectance spectroscopy. Physica E: Low-Dimensional Systems and Nanostructures. 2571-2574. 2010-01-01
- Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01
- InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy. Physica Status Solidi (A) Applications and Materials Science. 390-399. 2007-01-01
- Self-assembly of nanostructures on (631)-oriented GaAs substrates. AIP Conference Proceedings. 210-215. 2007-01-01
- Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01