Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates Article

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Overview

abstract

• InAs self-assembling quantum dots (SAQDs) were grown on GaAs(n 1 1) substrates ( n = 2, 3, 4, 5) by molecular beam epitaxy. Their structural and optical properties were studied by reflection high-energy electron diffraction, atomic force microscopy (AFM) and photoreflectance spectroscopy (PR). The PR spectra from 0.7 to 1.3 eV presented transitions associated to the SAQDs. The energy transitions were obtained by fitting the PR spectra employing the third derivative line-shape model. For n = 2, 4, 5, two functions were required to fit the spectra. For n = 3 only one function was required, in agreement with the more uniform SAQDs size distribution observed by AFM on GaAs(3 1 1)A. Franz-Keldysh oscillations (FKO) were observed in the PR spectra at energies higher than the GaAs band gap. From the FKO analysis we obtained the GaAs built-in internal electric field strength (Fint) at the InAs/GaAs(n 1 1) heterointerface. From Fint we made an estimation of the GaAs strain at the heterointerface. © 2006 Elsevier B.V. All rights reserved.

authors

• Cruz Hernández Esteban
• López-López M.
• Meléndez-Lira M.
• Méndez García Víctor Hugo
• Pulzara-Mora A.
• Pérez Centeno A.
• Rojas-Ramirez J.-S.

publication date

• 2006-01-01

published in

• Physica E: Low-Dimensional Systems and Nanostructures  Journal

Research

keywords

• GaAs(n 1 1); InAs; Photoreflectance; Piezoelectric effects; Quantum dots Atomic force microscopy; Electron diffraction; Electron transitions; Energy gap; Molecular beam epitaxy; Self assembly; Semiconducting gallium arsenide; GaAs(n 1 1); InAs; Photoreflectance; Piezoelectric effects; Semiconductor quantum dots

Identity

Digital Object Identifier (DOI)

• 10.1016/j.physe.2005.12.026

Additional Document Info

start page

• 139

end page

• 143

volume

• 32

issue

• 1-2 SPEC. ISS.