abstract

• Energetically unstable crystalline surfaces, among their uses, can be templates for the growth of periodic arrays of one-dimensional (1D) nanoscale structures. However, few studies have explored self-assembled faceting on high-index (HI) planes inside the stereographic triangle, and extant studies have not produced any criteria for encouraging the formation of one-dimensional periodic arrays. In this Letter, by analyzing the MBE growth of homoepitaxial facets on (631)A GaAs, a HI plane inside the triangle, we present a criteria to produce highly uniform 1D periodic arrays on unexplored surfaces. These families of planes are those belonging to the lines connecting the energetically stable HI GaAs (11 5 2) plane with any of the (100), (110), and (111) planes at the corners of the stereographic triangle. This novel strategy can lead to new possibilities in self-assembling 1D structures and manipulating physical properties, which in turn may result in new HI- and 1D-based experiments and devices. © 2016 Author(s).

authors

• Cruz Hernández Esteban
• López-López M.
• Méndez García Víctor Hugo
• Méndez-Camacho R.

publication date

• 2016-01-01

published in

• AIP Advances  Journal

keywords

• Gallium arsenide; III-V semiconductors; Semiconducting gallium; 1-D structures; Crystalline surfaces; Homoepitaxial; Nanoscale structure; Novel strategies; Periodic arrays; Self-assembling; Stereographic triangle; Periodic structures

Digital Object Identifier (DOI)

• 10.1063/1.4954998

start page

end page

volume

• 6

issue

• 6