Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ monitored by reflection high-energy electron diffraction (RHEED). The shape and size of the InAs SAQDs were significantly affected by the growth temperature and the arsenic over-pressure. We observe a decrease of the SAQDS density and an increase in their height by increasing the growth temperature, and/or decreasing the arsenic over-pressure. This is accompanied by a remarkable red-shift of the PL emission energy from 1.3 to 1.5 μ m. © 2008 Elsevier Ltd. All rights reserved.

AFM; GaAs(1 0 0); Molecular beam epitaxy; PL; Quantum dots Arsenic; Atomic force microscopy; Atomic spectroscopy; Crystal growth; Emission spectroscopy; Gallium alloys; Growth temperature; Indium arsenide; Light; Light emission; Luminescence; Microscopic examination; Molecular beam epitaxy; Molecular beams; Molecular dynamics; Optical materials; Optical microscopy; Optical properties; Optical waveguides; Quantum electronics; Reflection high energy electron diffraction; Semiconducting gallium; Semiconducting indium; Semiconductor quantum wires; AFM; Atomic forces; GaAs(1 0 0); Growth conditions; In-situ; Inas quantum dots; Molecular-beam epitaxies; PL; PL emission energies; Quantum dots; Reflection high-energy electron diffractions; Shape and sizes; Semiconductor quantum dots

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