abstract

• The authors report a low-temperature photoluminescence (PL) study of multiple GaAs layers grown between AlAs(0.6 nm)/GaAs(0.6 nm) short-period superlattice barriers (SLBs) simultaneously grown on both GaAs(631)A and (100) substrates. Five GaAs-layers of different nominal thicknesses (LW, ranging from 12 to 2.4 nm) were grown by molecular beam epitaxy. By using (631)A-oriented substrates a self-organized and highly ordered corrugation is obtained in the growth of the GaAs layers, and at the end of the SLB growth, flat surfaces are found. Whereas, for the (100)-oriented sample, flat interfaces are confirmed after the growth of GaAs and SLB layers. By reducing L W below ∼3.6 nm in the (631) sample, strong quantum wire (QWR)-like confinement is achieved as deduced from polarized PL spectroscopy where polarization degrees as large as 0.43 are obtained. The PL emission energy of the (631)-QWRs is redshifted, as compared with the transitions of the (100)-oriented quantum wells, when LW is reduced. The authors explain this energy shift by the widening of the effective thickness of the confinement regions in the GaAs layers. © 2012 American Vacuum Society.

authors

• Cisneros-De-La-Rosa A.
• Cruz Hernández Esteban
• López Luna Edgar
• Méndez García Víctor Hugo
• Shimomura S.
• Vázquez-Cortés D.

publication date

• 2012-01-01

published in

• Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics  Journal

keywords

• Molecular beam epitaxy; Nanowires; Semiconducting gallium; Semiconductor quantum wires; Effective thickness; Energy shift; Flat interface; Flat surfaces; GaAs; GaAs substrates; Low temperature photoluminescence; Oriented sample; PL emission energies; PL spectroscopy; Polarization degree; Red-shifted; Self-assembled; Short-period superlattices; Gallium arsenide

Digital Object Identifier (DOI)

• 10.1116/1.3673798

start page

end page

volume

• 30

issue

• 2