abstract

• Ternary III-N-V semiconductor alloys are interesting and complex materials. GaNAs is one such material that has been studied extensively; however, the accurate determination of the N content within this material in which the growth conditions significantly increases the amount of interstitial N has not yet been reported. To address this problem, GaNAs layers (100 nm) were prepared using molecular beam epitaxy at temperatures between 400 and 600°C with a high nominal N concentration (3%25). The N content was determined using high resolution x-ray diffraction (HRXRD), secondary ion mass spectrometry (SIMS), and low-temperature photoluminescence (PL). The N concentration determined using these techniques was compared. Additionally, the relationship between the growth temperature and N concentration is discussed. The incorporation of N into interstitial sites resulted in significant variations in the N content as estimated by SIMS, HRXRD, and PL. © 2016 American Vacuum Society.

authors

• Cruz Hernández Esteban
• Espinoza-Figueroa J.Á.
• Gallardo S.
• López-López M.
• Méndez García Víctor Hugo
• Vidal Borbolla Miguel Angel

publication date

• 2016-01-01

funding provided via

• Consejo Nacional de Ciencia y Tecnología, CONACYT: 168761, 248071, 255489, INFR-2015-01, PNCPN2014-01  Grant

published in

• Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  Journal

keywords

• Growth temperature; Mass spectrometry; Molecular beam epitaxy; Secondary ion mass spectrometry; Semiconducting aluminum compounds; Semiconductor quantum wells; Temperature; X ray diffraction; X ray diffraction analysis; Complex materials; Growth conditions; High-resolution x-ray diffraction; III-N-V; Interstitial sites; Low temperature photoluminescence; N content; Semi-conductor alloys; Gallium alloys

Digital Object Identifier (DOI)

• 10.1116/1.4942900

start page

end page

volume

• 34

issue

• 2