selected publications
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letter
- Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition. Thin Solid Films. 24-26. 2014-01-01
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article
- In situ and real-time optical study of passive chemical etching of porous silicon and its impact on the fabrication of thin layers and multilayers. Journal of Applied Physics. 134:8-. 2023-01-01
- Spikes formation in the dispersion relation for dielectric–graphene photonic crystal. Physica B: Condensed Matter. 625:-. 2022-01-01
- Tailoring the UV–visible reflectivity range of VO2 thin films 2022-01-01
- The identification of byproducts from the catalytic reduction reaction of 4-nitrophenol to 4-aminophenol: A systematic spectroscopic study. Journal of Environmental Management. 316:-. 2022-01-01
- Optimization of wide-band quasi-omnidirectional 1-D photonic structures. Optical Materials. 117:-. 2021-01-01
- A wide band porous silicon omnidirectional mirror for the near infrared range. Journal of Applied Physics. 127:-. 2020-01-01
- Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy. Applied Optics. 59:D39-D42. 2020-01-01
- Temperature-dependent infrared ellipsometry of Mo-doped VO2 thin films across the insulator to metal transition. Scientific Reports. 10:-. 2020-01-01
- An algorithm for the in situ analysis of optical reflectance anisotropy spectra. Journal of Crystal Growth. 515:9-15. 2019-01-01
- TM plasmonic modes in a multilayer graphene-dielectric structure. Superlattices and Microstructures. 125:247-255. 2019-01-01
- Tailoring the transmission and absorption spectra in a graphene-dielectric multilayer system for Lorentzian profile in the chemical potential. Superlattices and Microstructures. 130:68-75. 2019-01-01
- On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Applied Surface Science. 439:963-967. 2018-01-01
- Reflectivity of 1D photonic crystals: A comparison of computational schemes with experimental results. International Journal of Modern Physics B. 32:-. 2018-01-01
- Digital holographic interferometry applied to the investigation of ignition process. Optics Express. 25:13190-13198. 2017-01-01
- Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). Applied Surface Science. 421:608-610. 2017-01-01
- A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Measurement Science and Technology. 26:-. 2015-01-01
- Spectral barcodes by superposition of quasiperiodic refractive index profiles. Optics Express. 23:8272-8280. 2015-01-01
- Design and optimization of antireflecting coatings from nanostructured porous silicon dielectric multilayers. Solar Energy Materials and Solar Cells. 123:144-149. 2014-01-01
- Photoluminescence lineshape of ZnO. AIP Advances. 4:-. 2014-01-01
- Controlling the optical properties of composite multilayered photonic structures: Effect of superposition. Optics Express. 21:17324-17339. 2013-01-01
- Omnidirectional photonic bangap in dielectric mirrors: A comparative study. Journal of Physics D: Applied Physics. 45:-. 2012-01-01
- Study of the omnidirectional photonic bandgap for dielectric mirrors based on porous silicon: Effect of optical and physical thickness. Nanoscale Research Letters. 7:-. 2012-01-01
- White metal-like omnidirectional mirror from porous silicon dielectric multilayers. Applied Physics Letters. 101:-. 2012-01-01
- Effect of interface gradient on the optical properties of multilayered porous silicon photonic structures. Journal of Physics D: Applied Physics. 44:-. 2011-01-01
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conference paper
- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings. -. 2018-01-01
- Real-time optical monitoring of semiconductor epitaxial growth. AIP Conference Proceedings. -. 2018-01-01
- Electron subband structure and mobility trends in p-n delta-doped quantum wells in Si. Progress in Electromagnetics Research Symposium. 962-965. 2008-01-01
- Enhancement of the electronic confinement improves the mobility in p-n-p delta-doped quantum wells in Si. Progress in Electromagnetics Research Symposium. 958-961. 2008-01-01