Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition
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While not reported in the literature, by employing highly oriented, semi-insulating, thin-film CdS as test material, we present the observation of the intrinsic photoluminescence Stokes shift in a semiconductor. Analysis of Raman peaks, transmission, reflection, and photoluminescence shows that during band-to-band emission at room temperature one-to-two longitudinal optical phonons with energy of 39.8 meV are emitted. The result is confirmed by the theoretically expected Huang-Rhys factor. © 2014 Elsevier B.V. All rights reserved.
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Band gap; Huang-Rhys factor; Phonons; Pulsed-laser deposition; Raman spectroscopy; Stokes shift; Thin-film CdS Cadmium sulfide; Energy gap; II-VI semiconductors; Phonons; Photoluminescence; Pulsed laser deposition; Pulsed lasers; Raman spectroscopy; Semiconducting cadmium compounds; Semiconductor lasers; Thin films; Band emission; Huang-Rhys factors; Longitudinal optical phonons; Raman peak; Semi-insulating; Stokes shift; Test materials; Sulfur compounds
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