abstract

• We report on a reflectance anisotropy (RA) spectrometer capable of measuring reflectance spectra on the 100 ms time-scale and sensitivity in the upper 10-4 range. A multichannel lock-in amplifier was used to acquire 32 wavelengths RA spectra covering the 2.25-3.85 eV photon energy range, where the E1 and E1 %2b Δ1 transitions of GaAs and other technologically relevant III-V semiconductor are located. The RA spectra recorded during the first stages of the GaAs homoepitaxial deposition are presented for the first 0.38 monolayers of growth, showing significative changes in the lineshape with low noise. Thanks to the capabilities of this instrument, it is possible to observe in detail, in terms of the evolution of RA spectra, the processes carried out during the migration of surface reconstruction between two stable phases present in the homoepitaxial growth of GaAs. © 2015 IOP Publishing Ltd.

authors

• Ariza Flores Augusto David
• Balderas Navarro Raúl Eduardo
• Guevara Macías Liliana Estela
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• Núñez Olvera Oscar Fernando
• Ortega Gallegos Jorge

publication date

• 2015-01-01

published in

• Measurement Science and Technology  Journal

keywords

• GaAs homoepitaxy; molecular beam epitaxy; optical characterization; reflectance anisotropy spectroscopy; reflectance difference spectroscopy; surface processes Anisotropy; Epitaxial growth; Gallium arsenide; Molecular beam epitaxy; Reflection; Semiconducting gallium; Homo epitaxies; Optical characterization; Reflectance anisotropy spectroscopy; Reflectance difference spectroscopy; Surface process; Spectrometers

Digital Object Identifier (DOI)

• 10.1088/0957-0233/26/11/115901

start page

end page

volume

• 26

issue

• 11