abstract

• We report on real-time spectroscopic reflectance anisotropy measurements carried out during the epitaxial growth of GaAs/GaAs (001). Our work is aimed to the study of fundamental processes occurring during the epitaxial growth of III-V semi-conductors. We show that during growth there is an oscillation in the surface strain associated to surface reconstruction, suggesting the existence of a mechanism of periodic build up-relaxation of the surface strain, indicating that the technique employed in this work may potentially distinguish between two reconstruction phases. © 2018 Author(s).

authors

• Ariza Flores Augusto David
• Balderas Navarro Raúl Eduardo
• Guevara Macías Liliana Estela
• Lastras Martínez Alfonso
• Lastras Martínez Luis Felipe
• Ortega Gallegos Jorge

publication date

• 2018-01-01

published in

• AIP Conference Proceedings  Proceedings

Digital Object Identifier (DOI)

• 10.1063/1.5024494

start page

end page

volume

• 1934