selected publications

• letter

  • New ordering of the InAs growth through high-temperature treatment of the GaAs (100) substrates.  Japanese Journal of Applied Physics, Part 2: Letters. L410-L413. 2003-01-01

• article

  • In-situ characterization of metal clusters supported on a birefringent substrate using reflectance difference spectroscopy.  Applied Physics A: Materials Science and Processing.  98:499-507. 2010-01-01
  • Study of the molecular beam epitaxial growth of InAs on Si-covered GaAs(1 0 0) substrates.  Journal of Crystal Growth.  311:1451-1455. 2009-01-01
  • Optical anisotropies of metal clusters supported on a birefringent substrate.  Physical Review B - Condensed Matter and Materials Physics.  78:-. 2008-01-01
  • Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy.  Japanese Journal of Applied Physics, Part 2: Letters.  41:L916-L918. 2002-01-01

• conference paper

  • Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1503-1507. 2004-01-01
  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  Journal of Crystal Growth. 201-207. 2003-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  Journal of Crystal Growth. 236-242. 2003-01-01
  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
  • Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 347-348. 2002-01-01