selected publications
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article
- GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots. Physica E: Low-Dimensional Systems and Nanostructures. 124:-. 2020-01-01
- Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy. Thin Solid Films. 702:-. 2020-01-01
- Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34:-. 2016-01-01
- Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films. Journal of Spectroscopy. 2016:-. 2016-01-01
- Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates. Physica Status Solidi (A) Applications and Materials Science. 206:836-841. 2009-01-01
- Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments. Journal of Crystal Growth. 311:1666-1670. 2009-01-01
- Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26:1093-1096. 2008-01-01
- P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE. Journal of Crystal Growth. 301-302:84-87. 2007-01-01
- Self-assembled GaAs quantum dots on pseudomorphic Si layers grown on AlGaAs by molecular beam epitaxy. Japanese Journal of Applied Physics, Part 2: Letters. 41:L916-L918. 2002-01-01
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conference paper
- Optical characterization of Alx Ga1-x As/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3I13-C3I16. 2010-01-01
- Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. C3C14-C3C18. 2010-01-01
- Evaluation of AlGaAs/GaAs two dimensional electron gas heterostructures to obtain a resistance standard. 2nd International Conference on Electrical and Electronics Engineering, ICEEE and XI Conference on Electrical Engineering, CIE 2005. 424-427. 2005-01-01
- Photoreflectance investigations of HEMT structures grown by MBE. Journal of Crystal Growth. 591-595. 2005-01-01
- Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy. Applied Surface Science. 204-208. 2004-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. Journal of Crystal Growth. 201-207. 2003-01-01
- Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures. Microelectronics Journal. 521-523. 2003-01-01
- Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots. Journal of Crystal Growth. 236-242. 2003-01-01
- Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01
- Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 347-348. 2002-01-01
- Triboelectric and Piezoelectric Nanogenerators for Self-Powered Healthcare Monitoring Devices: Operating Principles, Challenges, and Perspectives. Nanomaterials. -. 2022-01-01
- Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. -. 2014-01-01