publication venue for Control method for periodically faceted surfaces and application on AlGaAs/GaAs (631) heterostructures. 611:-. 2023-01-01 Reflectance anisotropies of polycrystalline Ce1-x Gdx O2-x/2/Si(001) interfaces. 639:-. 2023-01-01 Physical-chemical study of IPETC and PAX collector's adsorption on covellite surface. 602:-. 2022-01-01 Optical contrast in the near-field limit for structural characterization of graphene nanoribbons. 536:-. 2021-01-01 Adsorption of small gas molecules on strained monolayer WSe2 doped with Pd, Ag, Au, and Pt: A computational investigation. 514:-. 2020-01-01 A simple method for fabrication of antifuse WORM memories. 454:256-261. 2018-01-01 Electrosorption of As(III) in aqueous solutions with activated carbon as the electrode. 434:816-821. 2018-01-01 On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. 439:963-967. 2018-01-01 Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). 421:608-610. 2017-01-01 Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy. 333:92-95. 2015-01-01 Physical properties of chemically deposited Bi 2 S 3 thin films using two post-deposition treatments. 311:729-733. 2014-01-01 Sorption mechanism of Cd(II) from water solution onto chicken eggshell. 276:682-690. 2013-01-01 SIMS characterization of segregation in InAs/GaAs heterostructures. 255:1341-1344. 2008-01-01 Self-assembled and fluorescence enhancement of semiconductor nanoparticles induced by surfactant adsorption. 253:5781-5784. 2007-01-01 Structure and homoepitaxial growth of GaAs(6 3 1). 252:5530-5533. 2006-01-01 In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy. 221:48-52. 2004-01-01 Reflectance difference spectroscopy during CdTe/ZnTe interface formation. 190:307-310. 2002-01-01 On the origin of resonance features in reflectance difference data of silicon. 175-176:769-776. 2001-01-01 Electronic and magnetic structure in 4d transition metal clusters. 144-145:663-667. 1999-01-01 Stress in GaAs at the hetero-interface of ZnSe/GaAs/GaAs: A possible effect of pit filling and difference in thermal expansion coefficients. 151:271-279. 1999-01-01 Influence of ion sputtering on the surface topography of GaAs. 126:205-212. 1998-01-01 Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures. 134:95-102. 1998-01-01 Optical and structural properties of ZnSe/GaAs interfaces. 112:165-170. 1997-01-01 Quantum Hall effect devices based on AlGaAs/GaAs structures studied by photoreflectance spectroscopy 2004-01-01 Molecular dynamics study of bimetallic nanoparticles: The case of Au x Cu y alloy clusters 2003-01-01