selected publications

• article

  • In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy.  Applied Surface Science.  221:48-52. 2004-01-01
  • Structural study of ZnSe films grown on substrate with InxGa1-xAs and Al1-xGaxAs buffer layers: Strain, relaxation and lattice parameter.  Journal of Physics D: Applied Physics.  35:1408-1413. 2002-01-01

• conference paper

  • Model for the strain-induced reflectance-difference spectra of InGaAs/GaAs (001) epitaxial layers.  Physica Status Solidi C: Conferences. 2987-2991. 2003-01-01