selected publications

• article

  • In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy.  Applied Surface Science.  221:48-52. 2004-01-01

• conference paper

  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  Journal of Crystal Growth. 201-207. 2003-01-01
  • In situ optical monitoring of the interface strain relaxation of InGaAs/GaAs grown by molecular-beam epitaxy.  Physica Status Solidi C: Conferences. 3017-3021. 2003-01-01
  • Model for the strain-induced reflectance-difference spectra of InGaAs/GaAs (001) epitaxial layers.  Physica Status Solidi C: Conferences. 2987-2991. 2003-01-01
  • Surface dynamics during MBE growth of GaAs(001) monitored by in-situ reflectance difference spectroscopy.  Physica Status Solidi C: Conferences. 3012-3016. 2003-01-01
  • Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy.  MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. 367-368. 2002-01-01