selected publications
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article
- Raman study of directly synthetized graphene oxide films on Si, SiO2/Si and GaAs by remote-catalyzed CVD. Physica B: Condensed Matter. 669:-. 2023-01-01
- Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy. Applied Optics. 59:D39-D42. 2020-01-01
- Temperature-dependent infrared ellipsometry of Mo-doped VO2 thin films across the insulator to metal transition. Scientific Reports. 10:-. 2020-01-01
- An algorithm for the in situ analysis of optical reflectance anisotropy spectra. Journal of Crystal Growth. 515:9-15. 2019-01-01
- Differential reflectance contrast technique in near field limit: Application to graphene. AIP Advances. 9:-. 2019-01-01
- Quantum wells based structures tested by photoreflectance anisotropy spectroscopy at room temperature [Estructuras basadas en pozos cuánticos analizadas por fotorreflectancia anisotrópica a temperatura ambiente]. Revista Mexicana de Ingeniera Quimica. 18:825-830. 2019-01-01
- Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo. Revista Mexicana de Fisica. 65:43-48. 2018-01-01
- On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Applied Surface Science. 439:963-967. 2018-01-01
- Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001). Applied Surface Science. 421:608-610. 2017-01-01
- Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy. International Journal of Modern Physics B. 30:-. 2016-01-01
- A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring. Measurement Science and Technology. 26:-. 2015-01-01
- Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring. Journal of Crystal Growth. 425:21-24. 2015-01-01
- Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth. APL Materials. 2:-. 2014-01-01
- Effects of substrate orientation on the optical anisotropy spectra of GaN/AIN/Si heterostructures in the energy range from 2.0 to 3 5ev. Journal of Applied Physics. 111:-. 2012-01-01
- Micro reflectance difference techniques: Optical probes for surface exploration. Physica Status Solidi (B) Basic Research. 249:1119-1123. 2012-01-01
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conference paper
- Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings. -. 2018-01-01
- Real-time optical monitoring of semiconductor epitaxial growth. AIP Conference Proceedings. -. 2018-01-01
- A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution. Review of Scientific Instruments. -. 2012-01-01
- Giant reflectance anisotropy of polar cubic semiconductors in the far infrared. Physica Status Solidi C: Conferences. 2982-2986. 2003-01-01