Quantum wells based structures tested by photoreflectance anisotropy spectroscopy at room temperature [Estructuras basadas en pozos cuánticos analizadas por fotorreflectancia anisotrópica a temperatura ambiente]
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We report the visualization of interface optical anisotropics in III-V semiconductor based coupled double quantum wells by using photoreflectance anisotropy spectroscopy. Interfacial optical anisotropics were detected from buried layers with quantum dimensions at room temperature through a piezoelectric shear strain. The discrete transitions associated to coupled double quantum wells were observed in near-infrared range, specifically in the second telecommunication band. We propose to use this extended photoreflectance spectroscopy through a polarization contrast as a simple and complementary optical method for analyzing anisotropic quantum structures with polarizable defects or anti-symmetries. © 2019, Universidad Autonoma Metropolitana Iztapalapa. All rights reserved.
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Optical anisotropies; Photoreflectance; Quantum wells; Semiconductors
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