Collective dimer stress induced dichroism in II-VI semiconductors Conference Paper uri icon


  • The physical origin of sharp resonances in reflectance difference spectroscopy data at the critical points of the dielectric function of bulk semiconductors is shown to arise from an uniaxial in-plane stress component. These resonances are induced at the critical points via lifting the degeneracy of the optical transitions at the L and Γ points due to the resulting anisotropic strain.

publication date

  • 2002-01-01