Collective dimer stress induced dichroism in II-VI semiconductors
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abstract
The physical origin of sharp resonances in reflectance difference spectroscopy data at the critical points of the dielectric function of bulk semiconductors is shown to arise from an uniaxial in-plane stress component. These resonances are induced at the critical points via lifting the degeneracy of the optical transitions at the L and Γ points due to the resulting anisotropic strain.
