selected publications

• article

  • Lattice vibrations study of Ga1-xInxAs ySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy.  Journal of Physics: Conference Series.  28:147-150. 2006-01-01
  • Raman studies of aluminum induced microcrystallization of n%2b Si:H films produced by PECVD.  Thin Solid Films.  445:32-37. 2003-01-01
  • Dependence on the atmosphere of preparation of the Iuminescence of spark processed porous GaAs.  Journal of Applied Physics.  87:1270-1275. 2000-01-01
  • Raman scattering study of photoluminescent spark-processed porous InP.  Thin Solid Films.  379:1-6. 2000-01-01
  • Processing of porous GaAs at low frequency sparking.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  17:624-629. 1999-01-01
  • Raman scattering from fully strained Ge1-xSnx (x≤0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy.  Journal of Applied Physics.  84:2219-2223. 1998-01-01

• conference paper

  • Dependence on the growth direction of the strain in AlGaSb alloys.  Journal of Physics: Conference Series. -. 2009-01-01
  • Raman and FTIR spectroscopy of GaSb and AlxGa1-X alloys with nanometric thickness grown at low temperatures by liquid phase epitaxy.  AIP Conference Proceedings. 1258-1261. 2008-01-01
  • AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H.  Physica Status Solidi (A) Applications and Materials Science. 1014-1017. 2007-01-01
  • Influence of substrate conductivity on layer thickness in LPE GaAs.  Journal of Crystal Growth. 375-377. 2004-01-01
  • Structural characterization of microcrystalline-amorphous hydrogenated silicon samples prepared by PECVD method.  Proceedings of SPIE - The International Society for Optical Engineering. 1540-1543. 2004-01-01
  • Raman study of luminescent spark processed porous GaAs.  Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 622-627. 2001-01-01